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由上下电极覆盖的铁电薄膜中最小180度电畴尺寸

陈永秋 刘玉岚 王彪

陈永秋, 刘玉岚, 王彪. 由上下电极覆盖的铁电薄膜中最小180度电畴尺寸[J]. 应用数学和力学, 2006, 27(8): 899-903.
引用本文: 陈永秋, 刘玉岚, 王彪. 由上下电极覆盖的铁电薄膜中最小180度电畴尺寸[J]. 应用数学和力学, 2006, 27(8): 899-903.
CHEN Yong-qiu, LIU Yu-lan, WANG Biao. Minimum Size of 180 Degree Domains in Ferroelectric Thin Films Covered by Electrodes[J]. Applied Mathematics and Mechanics, 2006, 27(8): 899-903.
Citation: CHEN Yong-qiu, LIU Yu-lan, WANG Biao. Minimum Size of 180 Degree Domains in Ferroelectric Thin Films Covered by Electrodes[J]. Applied Mathematics and Mechanics, 2006, 27(8): 899-903.

由上下电极覆盖的铁电薄膜中最小180度电畴尺寸

基金项目: 国家自然科学基金资助项目(50232030;10172030;10572155)
详细信息
    作者简介:

    陈永秋(1963- ),男,黑龙江人,副教授;刘玉岚(1962- ),女,吉林人,博士,教授(联系人.Tel:+86-20-84110006;Fax:+86-20-84115692;E-mail:stslyl@zsu.edu.cn);王彪(1963- ),男,辽宁人,博士,教授.

  • 中图分类号: O322

Minimum Size of 180 Degree Domains in Ferroelectric Thin Films Covered by Electrodes

  • 摘要: 在较低的电压下,铁电畴发生反转的性能对于研发高密度铁电存储器是至关重要的.为了实现高密度存储,铁电畴必须做得愈小愈好.然而,当外加电场撤去后,很小的铁电畴是不稳定的,会发生缩小,直致消失,导致存储的信息消失.为解决此问题,发展了一种通用的方法用于决定避免反向反转的铁电畴的尺寸.做为一个例子,确定了由上下电极覆盖的铁电薄膜中最小180度电畴尺寸.该研究可以用于许多相似的问题.
  • [1] Scott J,Avaujo C,Paz De.Ferroelectric memories[J].Science,1989,246(4936):1400—1405. doi: 10.1126/science.246.4936.1400
    [2] Song Y J,Koo B J,Lee J K,et al.Electrical properties of highly reliable plug buffer layer for high-density ferroelectric memory[J].Appl Phys Lett,2002,80(13):2377—2379. doi: 10.1063/1.1467619
    [3] Luthi R, Haefke H, Meyer K-P,et al.Surface and domain structures of ferroelectric GASH crystals studied by scanning force microscopy[J].Surf Sci,1993,285(1/2):L498—L502.
    [4] Paruth P, Tybell T,Triscone J-M.Nanoscale control of ferroelectric polarization and domain size in epitaxial Pb(Zr0.2Ti0.8)O3 thin films[J].Appl Phys Lett,2001,79(4):530—532. doi: 10.1063/1.1388024
    [5] Li X, Mamchik A, Chen I-W.Stability of electrodeless ferroelectric domains near a ferroelectric/dielectric interface[J].Appl Phys Lett,2001,79(6):809—811. doi: 10.1063/1.1390326
    [6] Gopalan V, Mitchell T E. Wall velocities, switching times, and the stabilization mechanism of 180° domains in congruent LiTaO3 crystals[J].J Appl Phys,1998,83(2):941—954. doi: 10.1063/1.366782
    [7] Wang B, Woo C H.Stability of 180° domain in ferroelectric thin films[J].J Appl Phys,2003,94(1):610—617. doi: 10.1063/1.1578529
    [8] Landauer R. Electrostatic considerations in BaTiO3 domain formation during polarization reversal[J].J Appl Phys,1957,28(2):227—234. doi: 10.1063/1.1722712
    [9] Wang B, Xiao Z.On the dynamic growth of a 180° domain in a ferroelectric material[J].J Appl Phys,2000,88(3):1464—1472. doi: 10.1063/1.373840
    [10] Loge R E,Suo Z. Nonequilibrium thermodynamics of ferroelectric domain evolution[J].Acta Mater,1996,44(8):3429—3438. doi: 10.1016/1359-6454(95)00425-4
    [11] Wang B, Woo C H.Atomic force microscopy-induced electric field in ferroelectric thin films[J].J Appl Phys,2003,94(6):4053—4059. doi: 10.1063/1.1603345
    [12] Gruyitch L, Richard J-P, Borne P,et al.Stability Domain[M].New York:Chapman & Hall/CRC,2004, 137.
    [13] Woo J, Hong S, Setter N,et al.Quantitative analysis of the bit size dependence on the pulse width and pulse voltage in ferroelectric memory devices using atomic force microscopy[J].J Vac Sci Technol, B,2001,19(3):814—824.
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出版历程
  • 收稿日期:  2005-06-07
  • 修回日期:  2006-04-30
  • 刊出日期:  2006-08-15

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